Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator
نویسندگان
چکیده
منابع مشابه
Submicrometer Polymer Field - Effect Transistor
Recent developments towards future polymer electronics are aimed at different applications as organic displays, complementary circuits, and all-polymer integrated circuits [1-3]. Basic devices are organic field-effect transistors (OFET, cross section in Figs.2 and 3) with an active layer made from an organic material. Until now the achieved performance of OFET's is not sufficient for envisaged ...
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We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-d...
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The field programmable gate array (FPGA) market is expanding because FPGAs enable faster development times and lower development costs than mask programmable gate arrays (MPGAs).1) However, the conventional SRAM-based FPGA requires offchip, non-volatile PROMs to store configuration data, which increases the total device cost and the board area. To provide a low-cost solution for field programma...
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ژورنال
عنوان ژورنال: Journal of Materials Chemistry C
سال: 2020
ISSN: 2050-7526,2050-7534
DOI: 10.1039/c9tc06868f